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|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transfer characteristics v ds = 25v pulse test typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a] static drain-source on-state resistance 0.1 1 10 -50 0 50 100 150 2SK2188 v gs = 10v pulse test typ i d = 5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ] gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2SK2188 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v] safe operating area 0.01 0.1 1 10 100 1 10 100 1000 2SK2188 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit transient thermal impedance 0.01 0.1 1 10 2SK2188 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w] capacitance 10 100 1000 10000 0 20 40 60 80 100 2SK2188 0.005 f=1mhz tc=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf] 0 20 40 60 80 100 0 50 100 150 2SK2188 power derating power derating [%] case temperature tc [ c] 0 10 20 30 40 50 0 100 200 300 400 500 2SK2188 0 5 10 15 20 200v gate charge characteristics i d = 10a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v] |
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